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  ligitek electronics co.,ltd. property of ligitek only LBD356B-XX doc. no : qw0905- rev. : b date : - 2007 LBD356B-XX data sheet bar digit led display 18 - jan.
ligitek electronics co.,ltd. property of ligitek only LBD356B-XX package dimensions part no. page1/10 note : 1.all dimension are in millimeters and (lnch) tolerance is 0.25mm(0.01") unless otherwise noted. 2.specifications are subject to change without notice. . 3.film:temperature-resistant Q 100 c. 33.0(1.30") g y g e y 11.0 (0.43") b ? 0.45 typ 6.4 LBD356B-XX ligitek 2.54x6 =15.24(0.6") pin no.1 3.0 0.5 11.0 (0.43") 7.62 (0.3") u a kv k x k 7.8 (0.31")
14 internal circuit diagram 1 x c 610 9 2 4 ku kka v ab 8 1311 12 3 5 7 dp deg f ligitek electronics co.,ltd. property of ligitek only LBD356B-XX 2/10 page LBD356B-XX part no. hyshe 9ug sbks
ligitek electronics co.,ltd. property of ligitek only 13. 14. 12. 11. 8. 10. 9. 7. 6. cathode k cathode f cathode e cathode g cathode b cathode a common anode cathode dp cathode v pin no. 3. 4. 5. 2. 1. electrical connection LBD356B-XX cathode d cathode ku cathode c cathode ka cathode x page3/10 LBD356B-XX part no.
max. typ. common cathode or anode material emittedmin. common anode note : 1.the forward voltage data did not including 0.1v testing tolerance. 2. the luminous intensity data did not including 15% testing tolerance. LBD356B-XX orange algainp green aigainp yellow aigainp 1.7 17 620 574 20 1.7 587 15 1.7 2.12.6 2.6 2.1 2.12.6 static electricity or power surge will damage the led. use of a conductive wrist band or anti-electrosatic glove is recommended when handing these led. all devices, equipment and machinery must be properly grounded. part selection and application information(ratings at 25) solder temperature 1/16 inch below seating plane for 3 seconds at 260 part no * chip electrostatic discharge( * ) reverse current per any chip operating temperature storage temperature tstg t opr esd ir vf(v) d ( nm) (nm) electrical -25 ~ +85 -25 ~ +85 2000 10 v a ligitek electronics co.,ltd. property of ligitek only symbol absolute maximum ratings at ta=25 parameter forward current per chip peak forward current per chip (duty 1/10,0.1ms pulse width) power dissipation per chip pd i fp i f unit 75 60 75 60 30 hys 30 he 120 100 mw ma 30 sbks ma ratings page4/10 LBD356B-XX part no. iv(mcd) min. typ. iv-m 2:1 9ug 30 60 75 500 50 ingan/sic blue 475 26 ---3.5 4.2 ------ ------ ------ 3.055.0
vr=5v ir iv-m luminous intensity matching ratio symbol test condition for each parameter parameter luminous intensity per chip forward voltage per chip spectral line half-width reverse current any chip mcd iv nm a unit vf volt if=10ma if=20ma test condition if=20ma ligitek electronics co.,ltd. property of ligitek only part no. LBD356B-XX page 5/10 dominant wavelength d nmif=20ma
fig.3 forward voltage vs. temperature fig.5 relative intensity vs. wavelength ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a wavelength (nm) f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 fig.4 relative intensity vs. temperature ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 typical electro-optical characteristics curve forward voltage(v) fig.1 forward current vs. forward voltage f o r w a r d c u r r e n t ( m a ) forward current(ma) fig.2 relative intensity vs. forward current r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a ligitek electronics co.,ltd. property of ligitek only 1.0 0.1 1.0 10 100 1000 1.0101001000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40-200204060 1.0 1.1 1.2 500 550 600 0.0 0.5 1.0 1.52.02.53.0 80100 0.8 0.9 -20 -40 40 20 080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 650 hys chip page6/10 LBD356B-XX part no.
ligitek electronics co.,ltd. property of ligitek only r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a typical electro-optical characteristics curve r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 r e l a t i v e i n t e n s i t y @ 2 0 m a wavelength (nm) 550 0.0 600650700 0.5 f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 fig.5 relative intensity vs. wavelength 1.0 ambient temperature( ) -20 -40 0.8 100 80 60 40 20 0 1.1 0.9 1.0 fig.3 forward voltage vs. temperature 1.2 100 f o r w a r d c u r r e n t ( m a ) 1.0 0.1 forward voltage(v) 1.52.02.53.0 1.0 10 fig.1 forward current vs. forward voltage 1000 he chip ambient temperature( ) 02040 -40-20 0.0 60100 80 1.5 0.5 1.0 fig.4 relative intensity vs. temperature 2.0 7/10 page 2.5 0.5 100 forward current(ma) 0.0 1.0101000 1.5 1.0 2.0 fig.2 relative intensity vs. forward current 3.5 3.0 LBD356B-XX part no.
r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a f o r w a r d c u r r e n t ( m a ) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 fig.4 relative intensity vs. temperature wavelength (nm) r e l a t i v e i n t e n s i t y @ 2 0 m a 0 500 0.5 1.0 550 600 650 2.0 forward voltage(v) ambient temperature( ) fig.5 relative intensity vs. wavelength fig.3 forward voltage vs. temperature f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z @ 2 5 -20 -40 0.9 0.8 1.0 1.2 1.1 1.0 0.1 r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 80 60 40 020100 3.04.05.0 ambient temperature( ) 020 -40-2060100 80 40 forward current(ma) 1.0101001000 3.0 2.5 2.0 1.5 1.0 0.5 ligitek electronics co.,ltd. property of ligitek only fig.2 relative intensity vs. forward current typical electro-optical characteristics curve fig.1 forward current vs. forward voltage 10 1.0 100 1000 9ug chip 8/10 page LBD356B-XX part no.
9/10 page ligitek electronics co.,ltd. property of ligitek only 1.25 1.5 fig.2 relative intensity vs. forward current 20 101525 30 0.5 0.75 0.25 0 forward voltage(v) 5 0 345 forward current(ma) r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 1.0 sbk-s chip 20 25 30 15 10 5 0 1 f o r w a r d c u r r e n t ( m a ) typical electro-optical characteristics curve fig.1 forward current vs. forward voltage 2 1.0 0.5 fig.4 relative intensity vs. wavelength wavelength (nm) 75 50100 r e l a t i v e i n t e n s i t y @ 2 0 m a 580 380 0 480 480 430 530 630 680 30 40 20 10 0 f o r w a r d c u r r e n t @ 2 0 m a 0 fig.3 forward current vs. temperature ambient temperature( ) 25 part no.LBD356B-XX
this test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. mil-std-202: 210a mil-std-750: 2031 jis c 7021: a-1 mil-std-202: 208d mil-std-750: 2026 mil-std-883: 2003 jis c 7021: a-2 1.t.sol=230 5 2.dwell time=5 1sec 1.t.sol=260 5 2.dwell time= 10 1sec. solderability test solder resistance test this test intended to see soldering well performed or not. ligitek electronics co.,ltd. property of ligitek only jis c 7021: b-12 mil-std-883:1008 jis c 7021: b-10 mil-std-202: 107d mil-std-750: 1051 mil-std-883: 1011 mil-std-202:103b jis c 7021: b-11 mil-std-750: 1026 mil-std-883: 1005 jis c 7021: b-1 1.ta=-40 5 2.t=1000 hrs (-24hrs, +72hrs) 1.ta=105 5 2.t=1000 hrs (-24hrs, +72hrs) 1.ta=105 5 &-40 5 (10min) (10min) 2.total 10 cycles 1.under room temperature 2.if=10ma 3.t=1000 hrs (-24hrs, +72hrs) high temperature high humidity test thermal shock test 1.ta=65 5 2.rh=90%~95% 3.t=240hrs 2hrs operating life test low temperature storage test high temperature storage test the purpose of this is the resistance of the device which is laid under condition of low temperature for hours. the purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. the purpose of this test is the resistance of the device under tropical for hours. the purpose of this is the resistance of the device which is laid under condition of high temperature for hours. this test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. test condition test item reliability test: description reference standard page10/10 LBD356B-XX part no.


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